陈殿营
,
张宝林
,
庄汉锐
,
李文兰
无机材料学报
将由自蔓延燃烧合成法制备的β—Si3N4棒晶加入到α-Si3N4起始原料中,研究了热压烧结氮化硅陶瓷力学性能的变化.随棒晶添加量的增加,材料的韧性提高,抗弯曲强度下降.与不加棒晶相比,加入8wt％的β-Si3N4棒晶可使陶瓷的韧性从4.0MPa·m1/2提高到6.7MPa·m1/2.断口形貌和压痕裂纹的显微结构观察表明,韧性的提高源于长柱状晶粒的拔出和裂纹的偏转.
关键词:
β-Si3N4棒晶
,
silicon nitride
,
fracture toughness
张雯
,
王红洁
,
张勇
,
金志浩
无机材料学报
采用凝胶注模成型工艺,成功地制备了具有高强度、结构比较均匀并有较高气孔率的氮化硅多孔陶瓷。本文研究了制得的多孔氮化硅的力学性能和微观结构,并讨论了获得高性能的原因。结果表明,采用适当的成型条件可制备出结构均匀、强度高、加工性能优良的坯体,烧成的多孔氮化硅陶瓷强度均>150MPa,气孔率>50％。SEM照片显示气孔是由长柱状β-Si3N4晶搭接而成的。均匀的气孔分布和柱晶结构是获得高性能的主要原因。
关键词:
凝胶注模
,
porous ceramics
,
silicon nitride
Y Huang
,
H.N Hao
,
Y.L. Chen and B.L.Zhou (1)Department of Materials Science and Engineering
,
Tsinghua University
,
Beijing 100084
,
China 2)Institute of Metal Research
,
Chinese Academy of Sciences
,
Shenyang 110015
,
China Manuscript received 26 August 1996)
金属学报(英文版)
A new way of designing and preparing silicon nitride ceramic composite with high fracture toughness and nacre structure has been proposed. To mimic the laminated structure of nacre, Si_3N_4 matrix ceramic layer can be obtained through compacting rolling method. To mimic the secondary toughening of nacre structure, SiC whisker is added into Si_3N_4 and acts as the secondary toughening phase. Boron nitride (BN)is selected to mimic the organic layer in nacre so as to form the weak interfaces between Si_3N_4 layers. Alumina is added into BN to adjust the bonding strength of the interface.The Si_3N_4 sheets are stacked into the die after coating with BN. After the removal of the organic matter in them, the green body is hot pressed at 1820℃for 1.5 hours under N_2 atmosphere. The fracture toughness of the so-made Si_3N_4 composite at room temperature is 20.36MPa m~(1/2), the three-point bending strength at room temperature is 651.47MPa. The crack spreads and deflects along the interface between BN and Si_3N_4 layer and extends through the BN layer into Si_3N_4 layer. The improvement of the fracture toughness may be due to the staircase-shape-like crack which provides the long crack path, the fracture and deformation of Si_3N_4 layer, and the pullout of SiC whiskers from the Si_3N_4 layer.
关键词:
:secondary toughening
,
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,
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